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Preliminary Technical Information
TrenchT2 TM GigaMOS TM
Power MOSFET
IXTN550N055T2
V DSS =
I D25 =
R DS(on) ≤
55V
550A
1.30m Ω
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
miniBLOC, SOT-227
E153432
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Maximum Ratings
55
55
V
V
G
S
V GSS
V GSM
I D25
Continuous
Transient
T C = 25 ° C (Chip Capability)
± 20
± 30
550
V
V
A
D
S
I L(RMS)
I DM
External Lead Current Limit
T C = 25 ° C, Pulse Width Limited by T JM
200
1650
A
A
G = Gate
S = Source
D = Drain
I A
E AS
P D
T J
T JM
T stg
T L
T SOLD
V ISOL
M d
Weight
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
50/60 Hz, RMS t = 1 minute
I ISOL ≤ 1mA t = 1 second
Mounting Torque
Terminal Connection Torque
200
3
940
-55 ... +175
175
-55 ... +175
300
260
2500
3000
1.5/13
1.3/11.5
30
A
J
W
° C
° C
° C
° C
° C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
175°C Operating Temperature
Isolation Voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low R DS(on)
Advantages
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
BV DSS V GS = 0V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
55
V
Easy to Mount
Space Savings
High Power Density
V GS(th)
I GSS
V DS = V GS , I D = 250 μ A
V GS = ± 20V, V DS = 0V
2.0
4.0
± 200
V
nA
Applications
DC-DC Converters and Off-Line UPS
I DSS
R DS(on)
V DS = V DSS , V GS = 0V
T J = 150 ° C
V GS = 10V, I D = 100A, Note 1
1.10
10 μ A
1 mA
1.30 m Ω
Primary-Side Switch
High Speed Power Switching
Applications
? 2009 IXYS CORPORATION, All Rights Reserved
DS100173A(12/09)
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